DB HiTek "Developing Next-Generation Power Semiconductors GaN and SiC"

Preparing for the Future by Expanding the Power Semiconductor Lineup

DB HiTek, an 8-inch foundry specialist, announced on the 18th that it is accelerating development by making initial investments such as introducing core equipment necessary for manufacturing next-generation power semiconductors GaN (Gallium Nitride) and SiC (Silicon Carbide).

Semiconductors made from GaN and SiC materials are more resistant to high voltage, high frequency, and high temperature compared to conventional Si (Silicon)-based semiconductors. Due to their high power efficiency, demand is rapidly increasing for next-generation power semiconductors in newly emerging high-growth fields such as electric vehicles, renewable energy, fast charging, and 5G. Market research firm Yole D?veloppement forecasted that the GaN market will grow at an average annual rate of about 49%, from $185 million in 2022 to $2.035 billion in 2028. The SiC market is expected to grow at an average annual rate of 31%, from $1.794 billion in 2022 to $8.96 billion in 2028.

DB HiTek Bucheon Campus

In line with this trend, DB HiTek is promoting the expansion of its power semiconductor lineup based on GaN and SiC, which are its competitive core businesses. In particular, SiC, mainly applied to electric vehicle inverters, must withstand ultra-high voltages above 1200 volts, making it technically very challenging. However, since 6-inch wafers still dominate the market, DB HiTek, specializing in 8-inch wafers, holds a strong advantage. DB HiTek’s strategy is to enter the 8-inch market early and increase its market share.

A DB HiTek representative said, "We are improving foundry process characteristics through technical cooperation with GaN specialist fabless company AProsemicon," and added, "For SiC, we are collaborating on development with Busan Technopark and others as part of a national project."

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