AMD Also Gives a Thumbs Up... SK Hynix Confident in AI Semiconductor 'Super Gap'

Interview with the World's First 12-Stack HBM3 Developers
Capacity Increased by 50% Using Technology to Add More DRAM Chips

"Artificial Intelligence (AI) models are rapidly advancing, driving demand for ultra-high-speed, high-capacity memory. We appreciate SK Hynix for developing new high-bandwidth memory (HBM) semiconductors in line with this trend." - Roman Kirichinsky, Vice President and General Manager of AMD Memory Products Division

SK Hynix published an interview on the 9th in its newsroom with the development team behind the world's first 12-layer stacked HBM3 24GB semiconductor, which they developed and provided samples of to AMD. The situation at SK Hynix, which is achieving overwhelming results in HBM semiconductors to the extent recognized by AMD’s Vice President, a major GPU (Graphics Processing Unit) customer, was summarized. GPUs are devices that process many calculations simultaneously and are mainly used for AI training.

Kim Wang-su, SK Hynix DRAM Product Planning PL.
[Photo by SK Hynix]

HBM is a product that vertically connects multiple DRAM chips using TSVs (Through-Silicon Vias) to increase data processing speed. The HBM3 developed by SK Hynix in 2021 was the world’s first 4th generation product. Mass production began last year. The development of the 12-layer stacked 24GB package is also the first in the world. This was the key to attracting AMD. Sungmyeongsoo, HBM PE (Post-Process) PL at SK Hynix, said, "Going down a path never taken before always brings fear, but the joy doubles when the goal is reached," adding, "We take pride in being the first in the world to develop 12-layer HBM3."

SK Hynix’s 12-layer HBM3 increased the number of DRAM chips from 8 (in the existing 16GB product) to 12. The capacity increased by 50%. While implementing the largest existing capacity of 24GB, the height (product thickness) was maintained at the same level as the 16GB product. It was designed to process more data within the same space.

To increase capacity (number of layers) while maintaining thickness, DRAM chips were stacked one by one thinner by 40%. To prevent the chips from bending easily, the epoxy molding compound (EMC) was improved and the 'Advanced MR-MUF' process was introduced. The molding compound is a material that protects semiconductor chips from external heat, moisture, and shocks. It took 10 months to develop the 12-layer HBM after mass-producing the existing 8-layer HBM3. Unlike the previous process, Advanced MR-MUF applies technology to control wafer bending. Kwon Jong-oh, SK Hynix WLP (Wafer Level Packaging) BE Development PL, said, "The Advanced MR-MUF process improved productivity by about three times and heat dissipation by about 2.5 times."

Kwon Jong-oh, SK Hynix WLP BE Development PL. [Photo by SK Hynix]

The 12-layer HBM3 is already being tested by multiple global customers, including AMD, to whom product samples have been provided. SK Hynix stated, "We are receiving very positive feedback." Kim Wang-su, SK Hynix DRAM Product Planning PL, said, "With this product, SoC (System on Chip) companies can increase capacity by 1.5 times with the same size product," adding, "We will start supplying new products from the second half of the year." SoC is a product that integrates multimedia components such as graphics and audio, CPU (Central Processing Unit), and DRAM semiconductors to improve efficiency.

The key developers of SK Hynix’s 12-layer HBM3 expressed confidence that they will maintain the 'super-gap' in the 5th generation HBM3E and HBM4 products as well. They said, "As SK Hynix has firmly established itself as the undisputed leader in HBM, we will solidify our world No. 1 position in the next-generation HBM3E and HBM4."

This content was produced with the assistance of AI translation services.