Korea Leads Next-Generation Ultra-High-Density Semiconductor Technology to Break 'Moore's Law'

Professor Hyunseok Shin's Research Team at Ulsan National Institute of Science and Technology
Develops World's First Technology for Synthesizing Hexagonal Boron Nitride Single Crystals in Multiple Layers

Photo of hexagonal boron nitride with an actual synthesized atomic thickness of 3 layers transferred onto a silicon wafer. Provided by the Ministry of Science and ICT

[Asia Economy Reporter Kim Bong-su] Domestic researchers have devised a core technology for developing next-generation high-integration semiconductors that can break the limits of existing semiconductor technology known as 'Moore's Law.' Moore's Law is the principle that the density of transistors (microdevices) integrated into semiconductor integrated circuits (IC chips) doubles every two years, an observation discovered by Gordon Moore of Intel in 1965. In other words, it means semiconductor integration can be dramatically and rapidly advanced.

The Ministry of Science and ICT announced on the 1st that Professor Shin Hyun-seok's research team at Ulsan National Institute of Science and Technology (UNIST) has developed a technology to synthesize hexagonal boron nitride (hBN) single crystals in multiple layers for the first time in the world. The research results were published in the international journal Nature on the 2nd.

Hexagonal boron nitride is known as the only two-dimensional insulating material that can prevent functional degradation such as charge traps and charge scattering, which may occur in next-generation high-integration semiconductors. Next-generation high-integration semiconductors replace silicon with two-dimensional semiconductor materials such as molybdenum disulfide (MoS2) to solve problems like current leakage and heat generation and to increase chip integration density. However, since molybdenum disulfide directly contacting the wafer causes charge trap phenomena where charges get trapped, an insulator that physically separates the wafer and molybdenum disulfide is essential. Also, to prevent charge scattering, the insulating material must be the same two-dimensional material as molybdenum disulfide. Two-dimensional materials are connected in a two-dimensional planar form between constituent atoms, so charge scattering, which can be problematic in three-dimensional structured materials like silicon, does not occur.

Until now, developing technology to synthesize two-dimensional insulating materials in single-crystal form with appropriate thickness for use in semiconductor devices has been a challenge. The research team was able to synthesize hexagonal boron nitride single crystals with controllable thickness by adjusting the concentration of materials required for synthesis through a new synthesis method. Although large-sized hexagonal boron nitride suitable for commercialization has been reported in journals like Nature or Science, this is the world's first case of synthesizing single crystals in multilayer thin-film form.

Professor Shin said, "With this research, we have developed a material synthesis technology that can overcome the physical limits of existing high-integration semiconductors represented by Moore's Law," adding, "Since it is increasingly reported that hexagonal boron nitride can be used not only in semiconductors but also in hydrogen fuel cell electrolyte membranes, next-generation secondary battery electrode materials, quantum light sources, and more, active additional research is needed to secure fundamental technology for material production."

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