On the 31st, during the Q2 earnings conference call, Samsung Electronics stated, "The 3nm Gate-All-Around (GAA) process has reached a mature stage in the first generation yield, now entering its third year," and added, "The second generation 3nm GAA is scheduled for full-scale mass production in the second half of the year, starting with wearable products."



On the 8th, when the National Samsung Electronics Labor Union, Samsung Electronics' largest union, declared a three-day general strike, employees were arriving at the Samsung Electronics Hwaseong Plant in Hwaseong, Gyeonggi-do. The union held a general strike rally that day and plans to continue labor actions, including holding assemblies in front of the Hwaseong Plant main gate until the 10th. Photo by Yongjun Cho jun21@

On the 8th, when the National Samsung Electronics Labor Union, Samsung Electronics' largest union, declared a three-day general strike, employees were arriving at the Samsung Electronics Hwaseong Plant in Hwaseong, Gyeonggi-do. The union held a general strike rally that day and plans to continue labor actions, including holding assemblies in front of the Hwaseong Plant main gate until the 10th. Photo by Yongjun Cho jun21@

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They continued, "The 2nm GAA is planned for its first mass production in 2025, based on the experience from the 3nm process," and added, "The second generation 2nm GAA process is expected to begin mass production in 2026."


This content was produced with the assistance of AI translation services.

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