Samsung Electronics Develops Industry's First UFS 4.0 Memory... "Proving Technological Excellence Once Again"

[Asia Economy Reporter Park Sun-mi] Samsung Electronics announced on the 4th that it has developed the industry's first high-performance embedded flash memory compliant with the next-generation UFS 4.0 standard.

The international semiconductor standardization organization JEDEC approved the UFS 4.0 standard on the 3rd (local time in the United States). This once again proves Samsung's technological prowess in the semiconductor memory sector. UFS 4.0 doubles the data transfer bandwidth compared to the previous UFS 3.1, increasing it to 23.2Gbps, enabling faster data storage and reading.

UFS 4.0 is expected to be widely adopted in mobile devices such as the latest smartphones, which handle increasing amounts of data including high-resolution content and large-scale mobile games, as well as future automotive semiconductors and devices including the metaverse.

Samsung Electronics implemented industry-leading performance by equipping its self-developed UFS 4.0 controller and 7th generation V-NAND. Sequential read and write speeds have increased by 2 times and 1.6 times respectively compared to the previous generation (UFS 3.1). The sequential read speed of this product is 4200MB/s, and the sequential write speed is 2800MB/s.

Energy efficiency has also significantly improved. Samsung Electronics' UFS 4.0 provides continuous read performance of 6.0MB/s per 1mA, improving power efficiency by about 45% compared to the existing UFS 3.1 products.

Mobile devices equipped with Samsung Electronics' UFS 4.0 memory can process more data with the same battery capacity. A Samsung Electronics official stated, "We implemented the UFS 4.0 memory in a compact package measuring 11mm in width, 13mm in length, and 1.0mm in height, enhancing design convenience and space utilization for mobile devices, and plan to offer up to 1TB capacity."

This content was produced with the assistance of AI translation services.