Korean Researchers Secure Core Technology for 0-Nano Semiconductor Process

Professor Kim Dae-sik's UNIST Team Develops Fabrication Process for Sub-0 Nanometer Ultra-Fine Gap Structures Starting at Zero Nanometers

[Asia Economy Reporter Kim Bong-su] Domestic researchers have developed a core technology for manufacturing semiconductor devices with a size of 0 nanometers (nm).

Ulsan National Institute of Science and Technology (UNIST) announced on the 15th that the research team led by Distinguished Professor Kim Dae-sik of the Department of Physics developed a fabrication process for ultra-fine gap structures (zero gap) starting from 0 nanometers. Companies like Samsung Electronics and TSMC have recently developed semiconductor device manufacturing technology using 3-nanometer processes and are competing to transition to mass production systems. In this context, the development of core technology for the 0-nanometer process, which is several steps ahead, by Korean researchers is attracting attention for its potential future impact.

When the 'zero gap structure' is created on a flexible substrate, it operates as an ultra-high-efficiency optical active device that can be used in antennas and other applications. The zero gap structure developed by the research team consists of thin metal layers. When two metal layers are deposited closely adjacent to each other on a substrate, an ultra-fine heat is generated only at the interface, based on this principle. This phenomenon occurs because the same metal material is deposited on the substrate under different conditions. When the substrate is bent and tensile force is applied, a gap close to 0 nanometers is formed, but when the tension is removed, the two metal layers become connected.

This openable and closable zero gap structure can be used as an active optical device that switches between an 'on' state with electromagnetic wave (light) transmittance close to 1 and an 'off' state with transmittance around 10^-5. When the gap is open, the capacitance effect strongly amplifies the electric field inside the gap, allowing electromagnetic waves to pass through at a high rate. However, even if the gap is partially closed, the capacitance function disappears, causing the transmittance to drop sharply. The on/off ratio, which indicates switching efficiency, reaches as high as 10^5, and the performance was maintained even after more than 10,000 on/off switching cycles.

Distinguished Professor Kim Dae-sik explained, "Optical devices using gap structures apply the concept of an electrical circuit with a definite 'short circuit' (on-off), resulting in high switching efficiency," adding, "Since complex nano processes are not required, it is easy to immediately apply this technology to actual devices." Generally, when changing the antenna material to modulate optical signals, the difference in dielectric constants between the material (3~4) and air (1) is not large, resulting in low efficiency of optical devices.

Co-researcher Professor Jung Ji-yoon of the Department of Physics at Kangwon National University stated, "Very efficient electromagnetic wave shorting is possible not only in microwave and terahertz waves but also in the mid-to-near infrared range," and predicted, "There is high potential for use as a next-generation active device for controlling microwaves and terahertz waves used in 5G and 6G communications."

The 0-nanometer optical device fabrication technology can also be applied to semiconductor device manufacturing. By creating ultra-fine gap structures using polymer materials that can be easily removed (etched) instead of metal and depositing semiconductor materials in these gaps, devices with widths less than 1 nanometer can be produced. This can be applied as next-generation technology to overcome the limits of device integration technology faced by semiconductor companies such as Samsung, Intel, and TSMC.

This research was published on the 24th of last month in the world-renowned journal in the field of optical devices, Advanced Optical Materials.

This content was produced with the assistance of AI translation services.