'PLUS Global HBM Semiconductor' Tops Semiconductor ETFs in 3-Year Returns
Samsung Electronics, SK hynix, and Micron Make Up 75-80% of Portfolio
Hanwha Asset Management announced on May 21 that its 'PLUS Global HBM Semiconductor' Exchange Traded Fund (ETF) has recorded the highest three-year return among domestic semiconductor ETFs (excluding leveraged and inverse products).
According to Fn Spectrum, as of the previous day, there are three semiconductor investment ETFs (excluding leveraged and inverse products) that have achieved a cumulative three-year return of over 500%. Among them, the 'PLUS Global HBM Semiconductor' ETF posted the highest three-year return at 676.67%.
The stock price performance of the constituent stocks has supported these returns. Over the past three months, SK hynix rose 92.9%, Samsung Electronics 54%, Micron 71%, and SanDisk 114.2%. Over the past year, SK hynix surged 812.2%, Samsung Electronics 427.8%, Micron 646.2%, and SanDisk 3365.8%.
The PLUS Global HBM Semiconductor ETF invests broadly across the global memory semiconductor value chain, covering HBM, DRAM, NAND, and memory equipment. The core holdings are the three leading global memory companies—Samsung Electronics, SK hynix, and Micron—which together account for approximately 75% to 80% of the portfolio.
This month’s regular rebalancing further expanded the portfolio. SanDisk was newly included to strengthen NAND exposure, and the ETF also added memory test and post-processing equipment stocks, such as Teradyne and Techwing.
Additionally, investments in this ETF can enjoy tax benefits when made through Individual Retirement Pension (IRP) or pension savings accounts. Pension accounts benefit from tax deferral, and when pension payments begin after age 55, they are taxed at the relatively low pension income tax rate (3.3–5.5%), providing further tax savings.
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Geum Jeongseop, Head of the ETF Business Division at Hanwha Asset Management, stated, "AI infrastructure investment is spreading from a GPU focus to HBM, server DRAM, and data center NAND. This ETF was designed to cover the entire memory supercycle driven by AI, expanding its investment scope from HBM and DRAM to NAND and memory equipment in a single product."
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