SK Hynix Unveils Next-Generation NAND Storage Product Strategy at US OCP Summit

Introducing the AI-Optimized 'AIN Family' Product Lineup
'HBF Night' Held to Expand the Ecosystem
"Growth in Next-Generation NAND Storage as Well"

SK Hynix announced on the 27th that it unveiled its next-generation NAND storage product strategy at the '2025 Open Compute Project (OCP) Global Summit' held in San Jose, California, USA, from October 13 to 16 (local time).

Scene from SK Hynix's presentation session at the OCP Global Summit held in San Jose, California, USA. SK Hynix

The OCP Global Summit is a global event hosted by the Open Compute Project, the world's largest open data center technology collaboration association. The event serves as a platform to share the latest semiconductor technologies and achievements for building future data center environments.

At this event, SK Hynix introduced its new lineup of NAND storage products, the 'AIN Family.' Demand for NAND storage has been growing rapidly and attracting attention as the artificial intelligence (AI) inference market expands at a fast pace. High-performance NAND storage is essential for processing large volumes of data quickly and efficiently.

Kim Cheonseong, Executive Vice President in charge of eSSD product development, took the stage to introduce the AIN Family. AIN stands for 'AI-NAND.' According to Kim, the AIN Family consists of NAND solutions optimized for three areas: performance, bandwidth, and capacity. This product lineup is designed to maximize data processing speed and storage capacity.

The AIN Family includes three products: AIN P, D, and B. In AIN P, 'P' stands for performance. It efficiently handles massive data input and output in large-scale AI inference environments. By minimizing bottlenecks between AI computation and storage, it significantly improves processing speed and energy efficiency. To achieve this, the company is designing a new structure for both NAND and controllers, and plans to release samples by the end of next year.

In AIN D, 'D' stands for density. This high-capacity solution is focused on storing large volumes of data with low power consumption and cost, making it well-suited for AI data archiving. The goal is to create a mid-tier storage solution that increases capacity to the petabyte level-far beyond existing QLC-based terabyte-class SSDs-while combining the speed of SSDs with the cost-effectiveness of HDDs.

In AIN B, 'B' stands for bandwidth. This product expands bandwidth by stacking NAND layers. It is the company's product name for the technology known as HBF. HBF refers to a product that stacks NAND flash, similar to high-bandwidth memory (HBM), which is made by stacking DRAM.

To expand the AIN B ecosystem, SK Hynix, together with SanDisk-which signed an HBF standardization memorandum of understanding (MOU) in August-hosted an 'HBF Night' event near the OCP venue on October 14, inviting global big tech representatives to the science and technology center. The event, which featured a panel discussion with professors from Korea and abroad, was attended by dozens of semiconductor and system design experts and engineers. At the event, the company proposed industry-wide cooperation to accelerate innovation in NAND storage products.

Ahn Hyun, President and Chief Data Officer (CDO) of SK Hynix, stated, "Through this OCP Global Summit and HBF Night, we were able to showcase our present and future as a 'global AI memory solution provider' in a rapidly changing, AI-centered market environment. We will continue to collaborate with customers and various partners in next-generation NAND storage to become a key player in the AI memory market."

This content was produced with the assistance of AI translation services.