ChipsKey Begins Mass Production of 650V GaN Power Semiconductors

ChipsKey, a company specializing in the design of gallium nitride (GaN) power semiconductors, announced on June 9 that it has begun mass production of 650-class GaN power semiconductors for the first time in Korea.

ChipsKey will produce four types of 650-volt (V) power semiconductor devices based on GaN-on-Si (silicon-based GaN) technology through overseas foundries, aiming to target the next-generation power semiconductor market, including high-speed mobile chargers, AI data centers, and industrial power supplies.

GaN is attracting attention as a key component in power infrastructure such as electric vehicles, energy storage systems (ESS), and data centers, due to its higher power efficiency, high-speed switching, high-temperature stability, and miniaturization compared to conventional silicon (Si).

Because GaN power semiconductors have a high technological entry barrier, there have been no domestically produced commercial products in Korea, resulting in reliance on imports.

ChipsKey has minimized energy loss and improved speed and efficiency compared to overseas competitors by using devices that can operate stably even in high-temperature environments (150°C).

The company explained that ChipsKey's GaN power semiconductor technology, which has already been used in high-speed chargers, is expected to be applied to AI and cloud-based data centers, where power demand is rapidly increasing.

ChipsKey CEO Kwak Chulho stated, "The successful first mass production of domestically produced GaN power semiconductors is highly significant, not only for technological independence but also for securing export competitiveness in the future," adding, "We also plan to expand our lineup after completing reliability tests within the year for products based on high thermal conductivity substrates (QST) with excellent heat dissipation control."

ChipsKey is also developing highly integrated GaN SoC (System-on-Chip) technology, which reduces chip area and increases circuit integration by incorporating the drive circuit into a single chip.

This content was produced with the assistance of AI translation services.