SK Hynix Accelerates Development of Ultra-High-Layer NAND Surpassing 238 Layers

Newsroom Releases Interview with New Year’s Incoming Executives

[Asia Economy Reporter Kim Pyeonghwa] Ko Eun-jung, Vice President in charge of next-generation process development at SK Hynix, has set a goal to develop ultra-high-layer NAND flash this year. SK Hynix plans to strive to introduce a product with a higher technological level than the 238-layer 4-dimensional (4D) NAND developed successfully last year.

On the 19th, SK Hynix released an interview with Ko Eun-jung, Vice President of Next-Generation Process at SK Hynix Future Technology Research Institute, in its newsroom. Vice President Ko is the only female executive named in SK Hynix's new year executive appointments.

Since joining in 2005, Vice President Ko has been responsible for NAND flash development and mass production. She has also been involved in significant projects such as DRAM development and 3-dimensional (3D) NAND development. She has worked across various fields within Research & Development (R&D) strategy, managing key product development strategies. Currently, she is focusing on developing next-generation 4D NAND processes.

Eunjeong Go, Vice President of Next-Generation Process, Future Technology Research Institute, SK Hynix / [Photo by SK Hynix Newsroom]

In the interview, Vice President Ko highlighted her strength as a 'Generalist' who has broadly experienced the semiconductor industry. She also described herself as a 'convergent leader' who can create synergy by combining diversity in organization, major, gender, and product lines.

She said, "Thanks to my experience participating in the development of various products, I have been able to think expansively by integrating mutually referable aspects of each project. Developing next-generation NAND processes will not be easy, but I aim to create synergy based on this experience and mindset."

Vice President Ko aims to succeed in developing next-generation ultra-high-layer NAND this year. This is to overcome the current semiconductor market downturn and introduce high value-added products that will become core competitive advantages in the future. Previously, SK Hynix succeeded in developing the world's highest 238-layer 4D NAND in August last year. Vice President Ko is developing a new product with a higher technological level than that product.

Vice President Ko cited 'Sip-si-il-ban' (sharing small amounts to make a big difference) as the organizational keyword to overcome the semiconductor cold wave this year. She said, "In semiconductor processes, one person cannot do everything. Everyone does their best in their respective positions, and the results come together to complete a product." She added, "The way to turn the current crisis into an opportunity is the same. Not 'I' but 'we'?this is the DNA of SK Hynix to overcome the crisis."

This content was produced with the assistance of AI translation services.