Development of Next-Generation Ultra-Thin Transparent and Flexible Memory

Dr. Dongik Son's Research Team at KIST Secures Core Technology for Wearable Memory

[Asia Economy Reporter Kim Bong-su] A next-generation ultra-thin memory device with transparent and flexible characteristics has been developed.

The Korea Institute of Science and Technology (KIST) announced on the 28th that Dr. Dong-Ik Son's research team at the Functional Composite Materials Research Center developed a transparent and flexible memory device based on a hetero low-dimensional ultra-thin nanostructure by forming zero-dimensional quantum dots as a single layer between ultra-thin structures of hexagonal Boron Nitride (h-BN), a two-dimensional nanomaterial with insulating properties.

Flexible memory devices based on two-dimensional nanomaterials play a crucial role in data storage, processing, and communication, making them essential elements in the next-generation wearable market. When ultra-thin memory devices are implemented using two-dimensional nanomaterials with thicknesses of a few nanometers (nm), memory integration density can be significantly increased compared to existing technologies, leading to the development of flexible resistive memory devices based on two-dimensional nanomaterials. However, existing memories using two-dimensional nanomaterials have limitations as memory devices due to their weak carrier confinement characteristics.

The research team introduced zero-dimensional quantum dots with excellent quantum confinement properties as an active layer to control carriers in two-dimensional nanomaterials, realizing a device that can be a candidate for next-generation memory. Based on this, they fabricated a transparent and flexible device by forming zero-dimensional quantum dots as a vertically stacked composite structure between two-dimensional hexagonal Boron Nitride (hBN) nanomaterials with a sandwich structure. The developed device maintained over 80% transparency and preserved memory functionality even when bent.

Dr. Dong-Ik Son stated, "Compared to conductive graphene, we established a foundation for ultra-thin nano-composite structure research by proposing quantum dot stacking control technology on insulating hexagonal Boron Nitride (hBN), and revealed the fabrication and operation principles of next-generation memory devices." He added, "We plan to systematize stacking control technology for hetero low-dimensional nanomaterial composites and expand its application range."

The research results were published in the latest issue of the international journal in materials science and composite materials, ‘Composite Part B: Engineering’ (IF: 9.078, top 0.549% in JCR category).

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