Providing Optimal Solutions with Maximum Capacity, Speed, and Ultra-Low Power Consumption

Samsung Electronics Launches World's First Ultra-High-Speed DRAM for AI and Next-Generation Supercomputers View original image


[Asia Economy Reporter Dongwoo Lee] Samsung Electronics announced on the 4th that it has launched 'Flashbolt,' an ultra-high-speed DRAM that can be used for next-generation supercomputers and AI-based data analysis.


Flashbolt is a 16-gigabyte (GB) capacity 3rd generation HBM2E (High Bandwidth Memory) DRAM. Compared to the existing 2nd generation, its speed and capacity have improved by 1.3 times and 2.0 times, respectively. This comes just two years after Samsung Electronics became the first in the world to develop and mass-produce the 2nd generation 8GB HBM2 DRAM 'Aquabolt.'


Samsung Electronics explained that Flashbolt stacks eight 16-gigabit (Gb) DRAM chips (10nm class) on a single buffer chip to achieve a 16GB capacity, providing optimal solutions such as maximum capacity, highest speed, and ultra-low power consumption for next-generation customer systems.


The product applies 'ultra-high-density TSV design technology.' This technology drills more than 5,600 tiny holes in the 16Gb DRAM chips and vertically connects eight chips with over 40,000 TSV bonding balls.


In particular, the product uses 'signal transmission optimized circuit design' to process 410 gigabytes of data per second at a speed of 3.2 gigabits per second through a total of 1,024 data transmission channels. This is equivalent to transmitting 82 Full HD (5GB) movies in one second.


By securing data transmission speeds of up to 4.2 gigabits per second for the first time in the world, it is expected that next-generation systems in specific fields will be able to process 538 gigabytes per second in the future. Compared to the 2nd generation product, the data processing speed per second is expected to improve by more than 1.75 times.


Samsung Electronics plans to mass-produce the product this year to contribute to the timely development of next-generation high-performance systems as well as ultra-high-speed data analysis based on existing AI.



Chul Choi, Vice President of the Memory Business Division's Strategic Marketing Office at Samsung Electronics, said, "With the launch of the highest-performance next-generation DRAM package ever, we can continue to maintain our business competitiveness in the rapidly growing premium market," adding, "We will further strengthen our unique business capabilities by providing more differentiated solutions in the future."


This content was produced with the assistance of AI translation services.

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