Samsung Electronics Former Researcher Sentenced to Probation for 'Leak of Core Semiconductor Technology'

Former Samsung Electronics senior researcher Lee Mo, who was prosecuted for leaking core semiconductor technology, was sentenced to a suspended prison term in the first trial.

On the 21st, the Criminal Division 23 of the Seoul Central District Court (Presiding Judge Oh Se-yong) sentenced Lee, who was indicted for violating the Industrial Technology Protection Act, to three years in prison with a four-year suspension, a fine of 20 million won, and ordered 240 hours of community service.

The court pointed out, "The materials leaked by the defendant via email included results obtained through years of research and development by Samsung Electronics and content related to national core technology," adding, "This is a crime that endangers domestic technology and the national economy." However, it added, "These materials were not leaked to foreign countries or other companies, and all materials stored in emails were recovered and deleted, so no serious damage occurred to Samsung Electronics."

Lee is accused of sending over 100 trade secrets, including 13 national core technologies such as 'D-RAM semiconductor stacking assembly technology' and 'D-RAM semiconductor commercialization strategy materials,' to his personal email from March to June 2022 while working as a senior researcher at Samsung Electronics, in preparation for moving to a U.S. company.

This content was produced with the assistance of AI translation services.