Samsung Electronics "Mass Production of Latest 8th Generation V-NAND Based SSD Within This Year"

Samsung Unveils Next-Generation Memory Solution in the US
Mass Production of High-Performance Data Center SSDs Within the Year
Random Write Performance Doubled, Power Efficiency Up 60%

Samsung Electronics unveiled several next-generation memory solutions at the largest NAND flash industry conference held in the United States. The company introduced new solid-state drive (SSD) products based on the latest 8th-generation V-NAND, designed for large-capacity storage devices for data centers, and announced plans to mass-produce them within the year.

On the 8th (local time), Samsung Electronics participated in the 'Flash Memory Summit (FMS) 2023' held at the Santa Clara Convention Center in California, USA, where it presented the latest storage solutions and technologies for various applications including servers, PCs, and automotive.

The company categorized the current challenges in the storage market into three areas: power, space, and performance, and introduced next-generation products and technologies to address these issues. These include the industry's highest performance PCIe 5.0 data center SSD 'PM9D3a' based on 8 channels, the highly power-efficient 'PM1743' applied to generative artificial intelligence (AI) servers, and the '256TB SSD' that achieves high integration density.

Song Yong-ho, Vice President of Samsung Electronics Memory Business Division, is delivering the keynote speech at Flash Memory Summit 2023. /
Photo by Samsung Electronics

The PM9D3a is a product unveiled for the first time at this event. It offers the industry's highest performance based on 8 channels (a unit where the SSD controller can simultaneously process NAND and data input/output) and is a PCIe (a serial interface standard supporting high-speed data input/output) 5.0-based data center SSD.

This product is based on Samsung Electronics' 8th-generation V-NAND (estimated 236 layers) and delivers sequential read/write speeds of up to 12,000 MB/s and 6,800 MB/s, respectively. Random read and write speeds are 1,700K IOPS (input/output operations per second) and 400K IOPS, respectively. Compared to the previous generation, random write performance has doubled, and power efficiency has improved by approximately 60%.

Samsung Electronics plans to mass-produce the PM9D3a in 2.5-inch form factors with capacities of 7.68 terabytes (TB) and 15.36TB within this year. In the first half of next year, it will introduce a variety of form factors and product lines tailored to customer demands, ranging from 3.84TB and below up to a maximum of 30.72TB.

Song Yong-ho, Vice President of Samsung Electronics' Memory Business Division, said in a keynote speech titled "Innovative Memory Solutions Enhancing Customer Experience," "We will continue to prioritize enhancing customer experience as our top value," adding, "We will persistently strive to provide optimized memory solutions through comprehensive collaboration with our customers."

Booth set up by Samsung Electronics at the Flash Memory Summit 2023 venue / Photo by Samsung Electronics

At the FMS demo booth, Samsung Electronics showcased an open-source-based 'User Workload Control Solution' developed in collaboration with Meta, as well as the 'Flexible Data Placement (FDP)' solution based on the standard NVMe specification. FDP is a technology that distinguishes and stores data by user groups in multi-user environments. It helps extend storage lifespan and reduce total cost of ownership (TCO).

This content was produced with the assistance of AI translation services.