SK Hynix Mass Produces World's Highest-Performance DRAM 'HBM3'... Supplies to Nvidia

SK Hynix announced on the 9th that it has started mass production of the world’s highest-performance DRAM, ‘HBM3’.

HBM (High Bandwidth Memory) is a high value-added, high-performance product that vertically connects multiple DRAM chips to dramatically increase data processing speed compared to conventional DRAM. HBM3 is the 4th generation of HBM, which has been developed in the order of 1st generation (HBM), 2nd generation (HBM2), and 3rd generation (HBM2E). SK Hynix’s HBM3 achieves a maximum speed of 819GB/s, capable of transmitting 163 Full-HD (FHD) movies in one second.

An SK Hynix official emphasized, “We secured market leadership by supplying the world’s first developed HBM3 to customers in just seven months since its development at the end of last October,” adding, “This product has opened a new chapter in the ultra-high-speed artificial intelligence (AI) semiconductor market.”

Recently, global big tech companies have been struggling to quickly process rapidly increasing data due to the accelerated development of advanced technologies such as AI and big data. In this context, next-generation DRAM HBM, which significantly improves data processing speed and performance compared to existing DRAM, is regarded as the optimal product to solve these challenges.

HBM3 will be supplied to the US company Nvidia. Nvidia recently completed performance evaluation of SK Hynix’s HBM3 samples and plans to combine HBM3 with its new product ‘H100,’ scheduled for release in the third quarter, to supply it in AI-based advanced technology fields such as accelerated computing. Accelerated computing refers to a computing method that significantly improves performance by processing data in parallel.

SK Hynix plans to increase HBM3 production volume in line with Nvidia’s schedule.

No Jong-won, President and Head of Business at SK Hynix, said, “Through close cooperation with Nvidia, we have secured top-class competitiveness in the premium DRAM market,” and added, “We will continue open collaboration to proactively understand and solve customers’ needs and become a ‘solution provider.’”

Meanwhile, SK Hynix is also reportedly developing 10-nanometer-class 5th generation (1b) DRAM (12~13 nanometers) and 238-layer NAND flash technology. Kwak No-jung, CEO of SK Hynix, recently stated in a conversation with employees, “In the past, DRAM was considered limited to 100 nanometers (nm, one billionth of a meter), but now we are achieving the 10-nanometer class,” adding, “With the capabilities of our members, we will continue to break through limits in both DRAM and NAND.”

This content was produced with the assistance of AI translation services.