Samsung Electronics Develops Industry-First High-Capacity 512GB CXL DRAM with 4x Increased Capacity

Expandable to Tens of Terabytes or More per Server

[Asia Economy Reporter Park Sun-mi] Samsung Electronics has developed the industry's first high-capacity 512GB CXL DRAM, accelerating the commercialization of next-generation memory.

On the 10th, Samsung Electronics announced that it has developed a 512GB CXL DRAM with four times the memory capacity compared to existing products. With the development of this high-capacity CXL DRAM, the memory capacity per server can be expanded to tens of terabytes or more, along with the main DRAM.

This product supports PCIe 5.0 and applies the EDSFF form factor used in large-capacity SSDs. It also features an ASIC (Application-Specific Integrated Circuit)-based controller, reducing data latency to about 20% compared to previous products.

Samsung Electronics plans to release an updated version of the 'Scalable Memory Development Kit' as open source within this month, enabling developers to quickly and easily develop programs that utilize CXL DRAM technology in various application environments. Additionally, the company will continue to develop next-generation memory interface products of terabyte scale or higher and commercialize them in a timely manner to meet the demands of the computing market requiring large-capacity memory.

Park Cheol-min, Executive Director of the New Business Planning Team at Samsung Electronics' Memory Business Division, stated, "CXL DRAM will expand as next-generation memory that innovatively enhances services such as artificial intelligence and big data," adding, "Samsung Electronics will actively promote technology standardization with customers and partners to rapidly expand the CXL memory ecosystem and lead the next-generation memory market by expanding CXL memory solutions."

This content was produced with the assistance of AI translation services.