Development of Industry's Largest Capacity 512GB DDR5 Module
Performance Twice as High as DDR4... Power Consumption Reduced by 13%

Samsung Electronics 512GB DDR5 Module <br>Photo by Samsung Electronics

Samsung Electronics 512GB DDR5 Module
Photo by Samsung Electronics

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[Asia Economy Reporters Heungsun Kim and Hyunjin Jung] Samsung Electronics is strengthening its collaboration with Intel, a leader in the computer central processing unit (CPU) market, to lead the next-generation DRAM field. The two companies have agreed to join forces to develop the industry’s largest capacity 5th-generation DRAM, aiming to change the landscape of the related market, which is currently dominated by 4th-generation products. Amid Intel’s announcement of large-scale investments in the semiconductor foundry sector, a ‘super collaboration’ movement among global competitors is also underway behind the scenes.


Samsung Electronics announced on the 25th that it has developed a 512GB DDR5 memory module, the largest capacity in the industry. DDR5 is the 5th-generation product commercialized by the semiconductor industry since last year and is considered the next-generation DRAM standard. Its maximum data transfer speed is 7200Mbps, more than twice the performance of the current mainstream 4th-generation DDR4 (maximum transfer speed 3200Mbps).


Capacity Expansion with 8-Layer TSV
Power Efficiency Improved with HKMG Process

The DDR5 developed by Samsung Electronics has a larger capacity than the previously released 256GB module. To maximize capacity on a single semiconductor chip, the technology applied the industry’s first 8-layer 'TSV (Through Silicon Via)' based on 16Gb for a general-purpose DRAM product. Previously, 4-layer TSV was the mainstream.


Another notable feature is the industry-first application of the 'High-K Metal Gate (HKMG)' process. HKMG is a technology that applies materials with a high dielectric constant (K) to better control leakage current in semiconductor processes. This method helps minimize power consumption by quickly and firmly closing the gate through which current leaks. According to Samsung Electronics, the new DDR5 product reduces power consumption by about 13% compared to previous processes.


Youngsoo Son, Executive Director of Product Planning at Samsung Electronics’ Memory Business Division, said, "The DDR5 memory developed through such process innovations is expected to accelerate the advancement of high-performance computers with excellent performance and high energy efficiency, expanding applications in autonomous driving, smart cities, and the medical industry." This product can also be used to improve power efficiency in data centers operating large-capacity servers.


"Leading the Next-Generation Market" ... Samsung Strengthens High-Performance DRAM Collaboration with Intel View original image


Plan to Commercialize High-Capacity DDR5 Aligned with Intel’s Second Half Product Launch

Samsung Electronics has maintained its leading position for nearly 30 years since becoming the world’s number one in the DRAM market in 1992 with industry-leading products like this. According to Taiwanese research firm TrendForce, Samsung’s DRAM market share in the fourth quarter of last year was 42.1%, overwhelming its competitors. DDR5 is expected to become the mainstream in the market by improving performance. Market research firm Omdia forecasts that DDR5 shipments will grow from 0.6% of the total DRAM market this year to 53.2% in 2024.


To expand its scope, collaboration with Intel, which focuses on CPU design and production, is necessary. The semiconductor industry expects Intel to release products compatible with DDR5 in the second half of this year. Samsung also plans to commercialize high-capacity DDR5 accordingly.



Caroline Duran, Vice President of Memory and Technology at Intel, said, "The importance of next-generation DDR5 memory is emerging in cloud data centers, networks, and edge computing, where the amount of data to be processed is increasing exponentially. We are working closely with Samsung Electronics to introduce DDR5 memory compatible with Intel’s Xeon Scalable processor, Sapphire Rapids."


This content was produced with the assistance of AI translation services.

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