Future Core Technology '4th Generation DRAM'... Samsung and SK Hynix Focused on Development

Samsung Secures Lithography Equipment for Second Half
Increases Circuit Density to Reduce Costs
SK Installs Cleanroom at Icheon Plant

[Asia Economy Reporter Dongwoo Lee] Samsung Electronics and SK Hynix are accelerating the development of next-generation DRAM using ultra-fine process technology. The goal is to overcome physical limitations by increasing high-capacity data processing speeds and reducing semiconductor size.

According to the industry on the 13th, Samsung Electronics plans to bring in lithography equipment in the second half of this year to mass-produce the 4th generation 10-nanometer class (1a) 16Gb DDR5 DRAM applying extreme ultraviolet (EUV) process next year.

EUV lithography technology uses a short-wavelength extreme ultraviolet light source to increase circuit density and finely engrave semiconductor circuits on wafers. This allows more semiconductors to be produced per wafer, reducing costs while producing high-performance and low-power semiconductors compared to existing products.

Earlier, Samsung Electronics succeeded in developing 4th generation 10-nanometer class (1a) DRAM applying EUV process in March this year. However, more time is needed to improve yield (the ratio of qualified products among total production) and invest in related technologies such as equipment before mass production.

Recently, Vice Chairman Lee Jae-yong of Samsung Electronics traveled to the Netherlands, reportedly to secure EUV lithography equipment. Since EUV lithography machines are exclusively supplied worldwide by the global semiconductor equipment company ASML, securing equipment ahead of competitors is crucial.

SK Hynix is also actively installing a cleanroom for EUV process at its M16 factory in Icheon Campus, Gyeonggi Province. The cleanroom construction is scheduled to be completed by the end of the year, and lithography equipment for 4th generation 10-nanometer class DRAM production will be brought in next year.

Hynix succeeded in mass-producing 3rd generation 10-nanometer class (1z) DRAM in the third quarter of this year, setting a goal to simultaneously develop and mass-produce 4th generation technology by next year. Some of the lithography equipment for this purpose is already known to have been secured.

In the semiconductor industry, 10-nanometer class DRAM technology is generally divided into processes such as x, y, z, and then called a, b, etc. Typically, the 1y process improves data read speed by more than 10% compared to the existing 1x process while reducing power consumption by more than 15%.

Market research firm TrendForce named 10-nanometer 4th generation DRAM using EUV process as one of the 10 key industry trends in 2021. As demand for server and mobile DRAM increases, developing high-performance compact products using ultra-fine processes is emerging as a core focus.

An industry official said, "From next year, securing 4th generation 10-nanometer class DRAM technology and stably responding to next-generation premium DRAM demand is a major task for the semiconductor industry," adding, "Global companies are accelerating mass production of products applying EUV process technology."

This content was produced with the assistance of AI translation services.