SK Hynix Begins Mass Production of Ultra-High-Speed DRAM 'HBM2E'
SK Hynix announced on the 2nd that it will begin full-scale mass production of the ultra-high-speed DRAM 'HBM2E'.
[Photo by SK Hynix]
[Asia Economy Reporter Ki-min Lee] SK Hynix announced on the 2nd that it will begin full-scale mass production of the ultra-high-speed DRAM ‘HBM2E’, developed last year, after 10 months.
SK Hynix’s HBM2E is a product capable of processing data at 3.6 gigabits (Gb) per second, handling 460.8 gigabytes (GB) of data per second through 1024 information input/output (I/O) ports.
SK Hynix explained that it is currently the fastest DRAM solution, capable of delivering 124 Full HD (high-resolution) movies (3.7GB each) in one second.
The capacity was also increased to 16GB, more than twice that of the previous generation, by vertically connecting eight 16Gb DRAM chips using TSV (Through Silicon Via) technology. TSV is an interconnection technology that drills thousands of tiny holes in DRAM chips and vertically penetrates the holes of the upper and lower chips to connect them with electrodes.
HBM2E, characterized by ultra-high speed, large capacity, and low power consumption, is attracting attention as a memory solution optimized for next-generation artificial intelligence (AI) systems such as deep learning accelerators and high-performance computing that require advanced computational power.
In addition, it is expected to be adopted in exascale supercomputers leading next-generation basic and applied science research such as climate change, biomedicine, and space exploration. Exascale supercomputers are ultra-high-performance computing systems capable of performing 10^18 operations per second.
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Oh Jong-hoon, Vice President in charge of GSM at SK Hynix, said, “SK Hynix has led technological innovation contributing to human civilization, including developing the world’s first HBM product,” and added, “We will take this full-scale mass production of HBM2E as an opportunity to lead the 4th Industrial Revolution and strengthen our position in the premium memory market.”
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