Samsung Electronics smartphone internal memory '512GB eUFS 3.1'

Samsung Electronics smartphone internal memory '512GB eUFS 3.1'

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[Asia Economy Reporter Changhwan Lee] Samsung Electronics announced on the 17th that it has become the world's first to begin full-scale mass production of the fastest smartphone memory ever, the '512 gigabyte (GB) mobile memory (eUFS 3.1 · embedded Universal Flash Storage 3.1)'.


The '512GB eUFS 3.1' has about three times faster sequential write speed than the existing 512GB eUFS 3.0, allowing it to store one 5GB Full HD movie in about 4 seconds. Sequential write speed refers to the speed at which data such as movies is stored in storage memory.


The sequential read speed of this product is 2100 megabytes (MB) per second, and the random read and random write speeds are 100,000 IOPS (Input/Output Operations Per Second, a unit measuring computer storage device performance) and 70,000 IOPS, respectively.


This is more than twice as fast as the data processing speed of PCs equipped with SATA solid-state drives (SSD) (540MB/s) and more than 10 times faster than UHS (Ultra High Speed)-I microSD card speed (90MB/s).


Samsung explained that by equipping smartphones with '512GB eUFS 3.1' memory, consumers can quickly store 8K ultra-high-definition videos or hundreds of high-capacity photos, experiencing convenience comparable to ultra-slim laptops.


Also, when transferring 100GB of data to a new smartphone, phones equipped with the existing eUFS 3.0 memory took more than 4 minutes, but phones equipped with eUFS 3.1 only need about 1 minute and 30 seconds.


Samsung Electronics plans to dominate this year's flagship smartphone memory market with the 'eUFS 3.1' product lineup consisting of three capacities: 512GB, 256GB, and 128GB.


Choi Cheol, Vice President of the Memory Business Division's Strategic Marketing Office at Samsung Electronics, said, "By starting full-scale mass production of eUFS 3.1, which surpasses the performance limits of memory cards, we have completely resolved the frustration consumers felt when storing data on smartphones," adding, "We will make all preparations to stably supply the quantities demanded by mobile manufacturers this year."



Meanwhile, Samsung Electronics is actively transitioning from 5th generation V-NAND to 6th generation V-NAND at its P1 line in the Pyeongtaek Campus, and has recently started mass production of 5th generation V-NAND at the new X2 line in Xi'an, China, where the first product shipment ceremony was held, aiming to aggressively target the market from flagship smartphones to high-end smartphones.


This content was produced with the assistance of AI translation services.

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