Pusan National University Secures Domestic and International Patents for Next-Generation Power Semiconductor 'Gallium Oxide' Technology

Securing High-Quality Single Crystal Growth and Device Technologies for Extreme Environments
Anticipated Industrial Impact

The research team led by Professor Sungkyun Park from the Department of Physics at Pusan National University (President Choi Jaewon) has filed four domestic patents in the field of gallium oxide (β-Ga2O3), a material gaining attention as a next-generation power semiconductor. Among these, one patent has also been filed in four overseas jurisdictions: the United States, Europe, Japan, and China.

This achievement is regarded as evidence of both the international value and technological competitiveness of the team's research outcomes.

Gallium oxide is emerging as a next-generation ultra-wide bandgap (UWBG) power semiconductor material, following silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). It operates stably under high voltage, high temperature, and high electric field conditions, and its potential for large-diameter wafer production using melt growth techniques makes it highly promising for industrialization.

In contrast, while diamond boasts excellent material properties, its commercialization faces significant barriers due to the difficulties of large-area growth and complex manufacturing processes. Existing materials such as Si, SiC, and GaN are limited by physical performance constraints and high production costs, which hinder further industrial expansion.

The research team has established a comprehensive technology framework including: the development of high-quality single crystal growth methods; ultrafast thin-film growth technology through substrate surface structure control; fabrication techniques for heterojunction vertical p-n diodes; and the development of devices for cryogenic conduction mechanism control and magnetic field response switching. These advancements are notable for enabling the realization of power semiconductors that can operate reliably even in extreme environments such as high voltage, high temperature, radiation, and cryogenic conditions.

Professor Park Sungkyun's team developed a growth method that minimizes oxygen defects and unintentional doping (UID) occurring during the gallium oxide growth process, successfully reducing defect concentrations in the crystal to levels suitable for extreme environments. This lays the foundation for the material to become a high-reliability solution capable of stable operation under harsh conditions such as space, high temperature, and radiation.

Professor Sungkyun Park's team. Courtesy of Pusan National University

This research was conducted as part of the Alchemist Project, supported by the Ministry of Trade, Industry and Energy, during phases 1 and 2 (April 2024 to December 2025). It is noteworthy that the team achieved defect control and material quality enhancement in a short period, starting from basic research. The team also plans to develop post-processing and manufacturing technologies for large-area wafer applications in the future.

Professor Park Sungkyun stated, "Gallium oxide will play a crucial role in high-performance power and environmental systems," emphasizing, "Our goal is to establish a next-generation power semiconductor platform that operates reliably even in extreme environments and to secure technological sovereignty for Korea in materials science."

He added, "Countries around the world are classifying gallium oxide as a strategic resource and accelerating competition to secure related technologies. This achievement marks an important starting point for Korea to take the lead in the next-generation power semiconductor and extreme environment materials markets."

This accomplishment is seen as more than just an academic milestone; it is considered a stepping stone toward the industrialization of next-generation power semiconductors and entry into the global market. Securing high-quality single crystal gallium oxide technology is expected to provide Korea with an opportunity to simultaneously strengthen its material competitiveness and industrial leadership.

This content was produced with the assistance of AI translation services.