SK Hynix Introduces Industry's First Mass-Production 'High NA EUV' Equipment

Next-Generation Manufacturing Equipment 'EXE:5200B' Delivered to Icheon M16
Ceremony Held on the 3rd
1.7 Times Higher Precision, 2.9 Times Greater Integration Than Conventional EUV
Securing Mass-Production Competitiveness in Next-Generation Memor

On September 3, SK Hynix announced that it has introduced the industry's first mass-production 'High NA Extreme Ultraviolet (EUV)' equipment to its Icheon M16 Fab (semiconductor plant).

SK Hynix Icheon M16 Fab exterior. Photo by SK Hynix

The equipment was manufactured by ASML, a Dutch semiconductor equipment company, and the model name is 'Twinscan EXE:5200B.' It is the first mass-production model in the industry using High NA EUV technology.

High NA EUV is a next-generation lithography tool that significantly improves resolution compared to existing EUV equipment. Among the equipment currently available on the market, it enables the most precise circuit patterning, playing a crucial role in reducing line width and increasing integration density. With optical technology that is 40% improved over conventional EUV, it allows for 1.7 times more precise circuit formation and achieves 2.9 times higher integration density.

For semiconductor manufacturers to enhance productivity and product performance, advanced microfabrication technology is essential. The more precisely circuits are implemented, the greater the number of chips produced per wafer, and both power efficiency and performance are improved.

Since SK Hynix first adopted EUV for its 10-nanometer-class, fourth-generation (1anm) DRAM in 2021, the company has continued to expand EUV adoption in advanced DRAM manufacturing. In particular, to meet the extreme miniaturization and high integration demands of the future semiconductor market, SK Hynix has pursued the introduction of next-generation equipment that surpasses existing EUV technology.

With the newly introduced equipment, SK Hynix plans to simplify existing EUV processes and accelerate next-generation memory development, thereby securing both enhanced product performance and cost competitiveness. The company expects this to further strengthen its position in the high value-added memory market and solidify its technological leadership. SK Hynix stated, "We have established a foundation to quickly develop and supply advanced products that meet customer demand in the fiercely competitive global semiconductor environment," adding, "We will further reinforce the reliability and stability of the global semiconductor supply chain through close cooperation with our partners."

On this day, SK Hynix also held a ceremony to commemorate the introduction of next-generation DRAM production equipment, attended by Kim Byungchan, President of ASML Korea; Cha Sunyong, Executive Vice President of SK Hynix (Head of Future Technology Research Institute and Chief Technology Officer); and Lee Byungki, Executive Vice President (in charge of manufacturing technology).

President Kim Byungchan said, "High NA EUV is a core technology that opens the future of the semiconductor industry," adding, "We will actively support SK Hynix through close cooperation to accelerate innovation in next-generation memory semiconductor technology." CTO Cha Sunyong stated, "With the introduction of this equipment, we have secured key infrastructure to realize the company's future technology vision," and added, "We will lead the AI memory market by developing state-of-the-art memory with the most advanced technology to meet the demands of the rapidly growing artificial intelligence (AI) and next-generation computing markets."

This content was produced with the assistance of AI translation services.