Samsung Electronics Establishes 'Cutting-Edge Memory R&D Organization' in Silicon Valley

Focus on Developing Next-Generation 3D DRAM

Samsung Electronics has established a memory research and development (R&D) organization focused on developing next-generation three-dimensional (3D) DRAM, marking the start of its efforts to secure technological competitiveness.

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According to industry sources on the 28th, Samsung Electronics has newly established an advanced memory R&D organization within its semiconductor Americas headquarters (DSA) located in Silicon Valley, USA. This organization plans to proactively research and develop 3D DRAM.

Currently, DRAM has a 2D structure with cells densely arranged on a single plane. The memory industry is concentrating all efforts on developing 3D DRAM with superior performance. Various methods exist, such as stacking cells vertically by laying them horizontally and piling them up, or using a vertical method that stacks cell structures in two layers.

Samsung Electronics succeeded in commercializing the world’s first three-dimensional vertical structure NAND (3D V-NAND) in 2013 and aims to take the lead in developing 3D vertical structures in DRAM as well. In October last year, Samsung Electronics announced plans to introduce a new 3D structure, rather than the existing 2D planar structure, in next-generation DRAM under 10 nanometers.

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