Detecting Semiconductor Defects in Real Time... Expecting Yield Improvement

Senior Researcher Youngsik Kim at KRISS Advanced Equipment Measurement Laboratory is measuring a three-dimensional nano device.

[Asia Economy Reporter Hwang Junho] Domestic researchers have developed a technology that can identify internal defects in advanced semiconductors or displays through non-destructive image inspection. This technology can be easily integrated into production lines and is expected to contribute to the independence from Japanese measurement equipment and improve the yield of South Korea's semiconductor industry.

The Korea Research Institute of Standards and Science (KRISS) announced on the 10th that the team led by Youngsik Kim, principal researcher at the Advanced Measurement Equipment Research Center, succeeded in inspecting internal defects of advanced semiconductors or displays made with three-dimensional nano devices using just a single image.

Development of 3D Nano Device Measurement Technology

Basic Configuration Diagram of 3D Nano Device Measurement Technology

The research team developed equipment capable of real-time measurement of the state of three-dimensional nano devices. The significance of this technology lies in its ability to detect defects in 3D nano devices in real time.

The core technology of memory semiconductor devices is to place as many devices as possible on a two-dimensional area. Recently, multilayer 3D nano devices made by stacking more than 10 layers of thin films using packaging technology have gained attention. These devices are widely used in advanced fields such as semiconductors, flexible displays, and IoT sensors. However, the inability to measure the thickness and refractive index of 3D nano devices in real time has resulted in a high defect rate. On-site inspections have involved destructive testing of some finished products, making it impossible to improve yield.

The research team developed measurement equipment that integrates an imaging spectrometer, a polarization camera, and an objective lens into a single system. When a 3D nano device passes through the team’s measurement equipment installed on the production line, a specific interference pattern appears on the equipment’s objective lens. By analyzing this pattern through the imaging spectrometer and polarization camera, reflectance and phase information according to various incident angles, wavelengths, and polarization states can be obtained simultaneously. This information is then used to calculate the final thickness and refractive index of the 3D nano device.

Significant Yield Improvement Through Real-Time Measurement

Image Acquired from 3D Nano Device Measurement Technology

This equipment is characterized by its ability to perform real-time inspections required in industrial sites. It combines existing devices into one, allowing easy installation and eliminating the hassle of multiple inspections to confirm defects. In particular, it can measure the thickness and refractive index?key factors for securing the yield of nano devices?in real time, which is expected to greatly contribute to yield improvement.

Youngsik Kim, principal researcher at KRISS, said, "This technology can contribute not only to the independence of domestic measurement equipment following Japanese export restrictions but also to securing the yield of advanced devices. It will become essential equipment for cutting-edge industries directly linked to national competitiveness, such as 3D semiconductors and next-generation displays."

The research results were published in the international academic journals Optics Express and Optics Letters.

This content was produced with the assistance of AI translation services.