SK KIPoundry "GaN Power Semiconductor Development Targeted Within This Year"

8-inch foundry (semiconductor contract manufacturing) company SK Ki Foundry has secured device characteristics of next-generation gallium nitride (GaN) power semiconductors and announced on the 19th that development is expected to be completed within the year.

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GaN is called the next-generation power semiconductor due to its low loss, high efficiency, and miniaturization characteristics compared to conventional silicon-based semiconductors. It is mainly used in power supplies, hybrid and electric vehicles, and solar power inverters.

SK Ki Foundry has focused on GaN process development since forming an official team in 2022, recognizing the market potential and prospects of GaN power semiconductors. Recently, it secured device characteristics of 650V GaN high electron mobility transistor (HEMT) devices.

The 650V GaN HEMT offers high power efficiency, so the final product price may not differ significantly from conventional silicon. The company explained that this could be advantageous for fabless (semiconductor design) companies developing products used in high-speed charging adapters, LED lighting, and data centers where silicon-based 650V products are used.

SK Ki Foundry plans to build a GaN portfolio providing various voltage GaN HEMTs and GaN integrated circuits (ICs) based on the 650V GaN HEMT. They also revealed plans to secure various customers through related businesses.

Lee Dong-jae, CEO of SK Ki Foundry, said, "We will establish ourselves as a power semiconductor specialized foundry by expanding the power semiconductor lineup not only with GaN but also with silicon carbide (SiC) in the future."

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