by Kang Jinhyoung
Published 03 Jan.2024 12:27(KST)
On the 3rd, at the Korea Institute of Science and Technology (KIST) in Seongbuk-gu, Seoul, a KIST researcher is measuring the characteristics of a next-generation ultra-low power magnetic memory device developed by KIST. Unlike conventional silicon semiconductors, the next-generation ultra-low power spin memory device uses 'spin' and aims to operate with only one-thousandth of the power of silicon semiconductors, making it a new concept semiconductor device that can function with very low power (ultra-low power).
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