by Hwang Seoyul
Published 25 Apr.2023 22:18(KST)
Soonchunhyang University announced on the 25th that the joint research results of Professor Yoo Geon-wook's research team from the Department of Electronic Information Engineering and Professor Lee Gyu-sang's team from the University of Virginia have been published in an international academic journal.
(Left) Professor Yoo Geon-wook, Department of Electronic Information Engineering, Soongsil University (Right) Researcher Yang Jeong-yong / Photo by Soongsil University
원본보기 아이콘The joint research team's study titled "Development of a Reconfigurable Neuromorphic Computing Device Using GaN/α-In2Se3 HEMT" was published in the prestigious international journal ACS NANO (IF 18.027, JCR 5.652%).
According to the joint research team, this study introduced a ferroelectric semiconductor material into a GaN-based high-mobility transistor and applied a new structure, achieving superior performance compared to previous studies.
Additionally, by using the GaN HEMT transistor for the first time in neuromorphic computing that mimics human synaptic behavior, the study demonstrated the potential for neuromorphic computing applications in high-frequency and power semiconductor fields in the future.
Professor Yoo stated, "By enabling control of the device characteristics through fast pulse signals, we have presented the possibility of reconfigurable HEMT devices," adding, "We are currently researching device structures and processes that can be integrated, and we expect intelligent high-frequency circuits and power semiconductor applications to be possible in the future."
Researcher Yang Jeong-yong said, "Based on this research, I will continue practical studies on reconfigurable high-mobility transistors capable of processing high-frequency signals as I pursue my doctoral studies in the United States."
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